Bulk Growth of Aluminum Nitride

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001401C0248
Agency Tracking Number: 00-0807
Amount: $685,100.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
CERMET, INC.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Vicente Munne
 Principal Research Engine
 (404) 351-0005
 vmunne@cermetinc.com
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
N/A
Abstract
The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen containing atmosphere in the form of AlN. Crystals will be characterized using x-ray diffraction and electronmicroscopy. This technique will provide BMDO with a source of high quality single crystal AlN wafers.This technology will provide a source for AlN single crystal wafers, which will be used in the fabrication of GaN laser diodes, high power nitridetransistors, nitride blue and white light emitting diodes, and nitride photodetectors.

* information listed above is at the time of submission.

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