Bulk Growth of Aluminum Nitride

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$685,100.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
N0001401C0248
Agency Tracking Number:
00-0807
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
CERMET, INC.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator:
Vicente Munne
Principal Research Engine
(404) 351-0005
vmunne@cermetinc.com
Business Contact:
Jeff Nause
President
(404) 351-0005
jnause@cermetinc.com
Research Institution:
n/a
Abstract
The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen containing atmosphere in the form of AlN. Crystals will be characterized using x-ray diffraction and electronmicroscopy. This technique will provide BMDO with a source of high quality single crystal AlN wafers.This technology will provide a source for AlN single crystal wafers, which will be used in the fabrication of GaN laser diodes, high power nitridetransistors, nitride blue and white light emitting diodes, and nitride photodetectors.

* information listed above is at the time of submission.

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