Bulk Growth of Aluminum Nitride

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001401C0248
Agency Tracking Number: 00-0807
Amount: $685,100.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Vicente Munne
 Principal Research Engine
 (404) 351-0005
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen containing atmosphere in the form of AlN. Crystals will be characterized using x-ray diffraction and electronmicroscopy. This technique will provide BMDO with a source of high quality single crystal AlN wafers.This technology will provide a source for AlN single crystal wafers, which will be used in the fabrication of GaN laser diodes, high power nitridetransistors, nitride blue and white light emitting diodes, and nitride photodetectors.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government