Development of a Truly Lattice-Matched III-Nitride Technology for

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-M-0228
Agency Tracking Number: 01-0005T
Amount: $70,000.00
Phase: Phase I
Program: STTR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
CERMET, INC.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeff Nause
 President
 (404) 351-0005
 jnause@cermetinc.com
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
 GEORGIA INSTITUTE OF TECHNOLOGY
 Kathy Moore-Hall
 505 Tenth Street
Atlanta, GA, 30332
 (404) 894-4544
 Nonprofit college or university
Abstract
Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the development cycle. Specifically, we propose to use existing semiconductor substrates to grow lattice matched InGaNto produce superior optoelectronic/electronic devices. The target composition of InGaN will result in the lowest wavelength emitters possible without the necessity of expensive UV-grade optics, has highly efficient emission, and should lead to improvedmobility in transistor devices. Highly efficient, vertical current nitride LEDs and FETs will be demonstrated early in Phase II, based on the successful completion of phase I objectivesThe successful completion of Phase I goals will demonstrate theutility of using this technology to improve the performance of high frequency electronic devices and short wavelength LED's, laser diodes, and detectors.

* information listed above is at the time of submission.

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