ZnO Based Integrated Photonics

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,990.00
Award Year:
2002
Program:
STTR
Phase:
Phase I
Contract:
n/a
Award Id:
56127
Agency Tracking Number:
02-0121T
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Vicente Munne
Principal Rsrch. Engineer
(404) 351-0005
vmunne@cermetinc.com
Business Contact:
Jeff Nause
President
(404) 351-0005
jnause@cermetinc.com
Research Institution:
Georgia Institute of Technology
James Berkowitz
225 North Ave.
Atlanta, GA, 30332
(404) 894-6422
Nonprofit college or university
Abstract
"ZnO is an excellent candidate for the growing field of nanophotonics due to its index of refraction, availability of native substrates, and the possibility of light emission. These properties make ZnO an ideal candidate on this growing field. Phase Iwork will concentrate in designing and characterizing waveguides, which will be the interconnects of future ZnO based devices built homoepitaxially on ZnO or heteroepitaxially on silicon. The ability to produce a photonic integrated circuit will produce alarge cost reduction on optical telecommunications circuits as many fiber interconnects will be eliminated. In addition, a substantial reduction in optical device size will also be possible. Moreover, a new generation of photonic integrated systems willbe enabled."

* information listed above is at the time of submission.

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