Development of ZnO spin Field Effect Transistor (FET)

Award Information
Agency:
Department of Defense
Branch:
Air Force
Amount:
$99,741.00
Award Year:
2003
Program:
STTR
Phase:
Phase I
Contract:
F49620-03-C-0118
Agency Tracking Number:
F033-0313
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Cermet, Inc.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator
 Varatharajan Rengaraj
 Principal Research Engineer
 (404) 351-0005
 vrajan@cermetinc.com
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
 PROF. HADIS MORKO¿
 Deborah W Valenti
 Virginia Commonwealth Univ., 601 West Main St.
Richmond, VA, 23284
 (804) 827-3322
 Nonprofit college or university
Abstract
The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demonstrate the growth of high quality homoepitaxial thisfilms of transition metal doped ZnO on ZNO using Cermet's MOCVD technology and in-house fabricated substrates. The quality of the films will be analyzed by X-ray, PL and DLTS. Electrical and magnetic properties will be investigated. Successfulcompletion of Phase I will yield room temperature spintronic material based ZnO for electronic and optical applications. This proposed work provides basis for a spin FET with more efficient operation. Spin FET needs less power than a conventional FET andits efficiency is higher than the conventional FET. Defense systems, automotive, commercial aviation and commercial communications industries will benefit from this technology

* information listed above is at the time of submission.

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