UV LEDs for Solid State Lighting
Department of Energy
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1019 Collier Road, Suite C1, Atlanta, GA, 30318
Socially and Economically Disadvantaged:
Abstract72979S03-I This project will develop technology to enable the commercial production of high-quality (In,Al,Ga)N epitaxial materials and high-performance UV LEDs for solid state lighting applications on AlN substrates. This will be accomplished by developing a production-quality bulk AlN wafer, developing high quality, p- and n-type doped AlGaN and InAlGaN-based multi-quantum wells, and introducing novel device structures including large area flip chip LED and amplified LEDs. Phase I will focus on the development of high quality, bulk AlN crystals to eliminate dislocations in the high-aluminum-content active layers. High n-type and p-type doping levels will be developed for an AlxGa1-xN composition, with x up to 0.6. Commercial Applications and Other Benefits as described by awardee: Long life, high power UV LEDs manufactured on native substrates should enable cost competitive, solid state light sources. This technology should save substantial energy in general lighting, automotive lighting, and aviation. It also would reduce particle emissions and greenhouse gases from power generation and reduce the U.S. dependency on foreign oil supplies.
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