High Power, Modulation Doped AlGaN/GaN FETs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-C-5413
Agency Tracking Number: 99-049T
Amount: $0.00
Phase: Phase I
Program: STTR
Awards Year: 2003
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Cermet, Inc.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Duns: 826426025
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeff Nause
 (404) 351-0005
Business Contact
 Jeff E.Nause
Title: President
Phone: (404) 351-0005
Email: njause@cermetinc.com
Research Institution
 Elizabeth L.Browder
 1101 E.Marshall Street, Sanger Hall, Rm.1-073
Richmond, VA, 23219
 (804) 828-6772
 Nonprofit college or university
Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The growth of nitride heterostructures will be provided by a world leader in nitride film growth and power devicetechnology. Device-quality films will be grown and characterized by Cermet's university partner. Additionally, FET device design and characterization will be enhanced by this nitride expert. The successful completion of Phase II goals will demonstrate theutility of Zno substrates in the fabrication of nitride power devices, and lead to viable, high power, nitride FETs for military applications, as well as rf devices and consumer electronics. This proposed work will provide the technology basis for a moreeffective nitride FET fabrication process, more effective thermal management, and more efficient operation. Defense systems, automotive, and commercial aviation, and commercial communication industries will benefit from this technology.

* information listed above is at the time of submission.

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