Bulk Growth of Gallium Nitride Single Crystal Boules

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
N0001402M0158
Award Id:
63960
Agency Tracking Number:
02-0105
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator:
VicenteMunne
Principal Rsrch. Engineer
(404) 351-0005
vmunne@cermetinc.com
Business Contact:
JeffNause
President
(404) 351-0005
jnause@cermetinc.com
Research Institute:
n/a
Abstract
The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government