Bulk Growth of Gallium Nitride Single Crystal Boules

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
N0001402M0158
Agency Tracking Number:
02-0105
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
CERMET, INC.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator:
Vicente Munne
Principal Rsrch. Engineer
(404) 351-0005
vmunne@cermetinc.com
Business Contact:
Jeff Nause
President
(404) 351-0005
jnause@cermetinc.com
Research Institution:
n/a
Abstract
The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.

* information listed above is at the time of submission.

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