Bulk Growth of Gallium Nitride Single Crystal Boules

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001402M0158
Agency Tracking Number: 02-0105
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Vicente Munne
 Principal Rsrch. Engineer
 (404) 351-0005
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.

* Information listed above is at the time of submission. *

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