Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Amount:
$98,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-09-C-0212
Agency Tracking Number:
08SB2-0794
Solicitation Year:
2008
Solicitation Topic Code:
SB082-052
Solicitation Number:
2008.2
Small Business Information
Cermet, Inc.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator
 Jeff Nause
 President
 (404) 351-0005
 jnause@cermetinc.com
Business Contact
 Jeff Nause
Title: President
Phone: (404) 351-0005
Email: jnause@cermetinc.com
Research Institution
N/A
Abstract
This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique, combined with lattice-matched substrates and state of the art device fabrication.

* information listed above is at the time of submission.

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