Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-09-C-0212
Award Id:
91925
Agency Tracking Number:
08SB2-0794
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator:
JeffNause
President
(404) 351-0005
jnause@cermetinc.com
Business Contact:
JeffNause
President
(404) 351-0005
jnause@cermetinc.com
Research Institute:
n/a
Abstract
This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique, combined with lattice-matched substrates and state of the art device fabrication.

* information listed above is at the time of submission.

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