Soraa

Basic Information

6500 Kaiser Drive
Fremont, CA, 94555-

Company Profile

n/a

Additional Details

Field Value
DUNS: 809425742
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: n/a


  1. Low-Cost GaN Substrates

    Amount: $225,000.00

    Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are ex ...

    SBIR Phase I 2014 ARPA-E Department of Energy
  2. Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

    Amount: $498,933.00

    Existing gas and solid state green laser technology is not adequate to Navy's needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers a ...

    SBIR Phase II 2013 Navy Department of Defense
  3. Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

    Amount: $149,061.00

    Existing gas and solid state green laser technology is not adequate to Navy"s needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers a ...

    SBIR Phase I 2012 Department of Defense Navy
  4. Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs

    Amount: $150,000.00

    Soraa proposes to develop low-cost, large area semipolar ammonothermal true bulk GaN substrates. Semipolar bulk GaN substrates are expected to be transformative for high power blue, green, and/or yell ...

    SBIR Phase I 2011 Department of Energy
  5. Solvothermal growth of low-defect-density gallium nitride substrates

    Amount: $100,000.00

    ABSTRACT: We propose to develop cost and growth-rate models quantifying the capability for Soraa's proprietary SCoRA ammonothermal reactor and associated procedures to produce bulk GaN with low ...

    STTR Phase I 2011 Air Force Department of Defense
  6. Scalable technology for growth of high quality single crystal gallium nitride

    Amount: $750,000.00

    We propose to demonstrate and advance several key aspects of our novel, scalable ammonothermal technology for growth of high quality single crystal gallium nitride. Specifically, we propose to demons ...

    STTR Phase II 2010 Air Force Department of Defense
  7. SBIR Phase II:High quality, low cost bulk gallium nitride substrates

    Amount: $499,999.00

    This Small Business Innovation Research (SBIR) Phase II project aims to develop a scalable, compact and rapid ammonothermal method to grow high-quality, low-cost bulk gallium nitride (GaN) substrates ...

    SBIR Phase II 2010 National Science Foundation
  8. SBIR Phase I: High Quality, Low Cost Bulk Gallium Nitride Substrates

    Amount: $99,935.00

    This Small Business Innovation Research Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. ...

    SBIR Phase I 2009 National Science Foundation
  9. Scalable technology for growth of high quality single crystal gallium nitride

    Amount: $100,000.00

    This Small Business Technology Transfer Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. ...

    STTR Phase I 2009 Air Force Department of Defense
  10. Development of Fabrication Techniques for High Extraction Efficiency Bulk-GaN-Based LEDs

    Amount: $99,767.00

    While there have been tremendous advances in light-emitting diode (LED) technology based on gallium nitride (GaN), LED performance still falls short of what is required for solid-state lighting to bec ...

    SBIR Phase I 2009 Department of Energy

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