Soraa

Company Information
Address 6500 Kaiser Drive
Fremont, CA, 94555-


Information

DUNS: 809425742

# of Employees: N/A


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Low-Cost GaN Substrates

    Amount: $225,000.00

    Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are ex ...

    SBIRPhase I2014Department of Energy ARPA-E
  2. Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

    Amount: $498,933.00

    Existing gas and solid state green laser technology is not adequate to Navy's needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers a ...

    SBIRPhase II2013Navy Department of Defense
  3. Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

    Amount: $149,061.00

    Existing gas and solid state green laser technology is not adequate to Navy"s needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers a ...

    SBIRPhase I2012Department of Defense Navy
  4. Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs

    Amount: $150,000.00

    Soraa proposes to develop low-cost, large area semipolar ammonothermal true bulk GaN substrates. Semipolar bulk GaN substrates are expected to be transformative for high power blue, green, and/or yell ...

    SBIRPhase I2011Department of Energy
  5. Solvothermal growth of low-defect-density gallium nitride substrates

    Amount: $100,000.00

    ABSTRACT: We propose to develop cost and growth-rate models quantifying the capability for Soraa's proprietary SCoRA ammonothermal reactor and associated procedures to produce bulk GaN with low ...

    STTRPhase I2011Air Force Department of Defense
  6. SBIR Phase II:High quality, low cost bulk gallium nitride substrates

    Amount: $499,999.00

    This Small Business Innovation Research (SBIR) Phase II project aims to develop a scalable, compact and rapid ammonothermal method to grow high-quality, low-cost bulk gallium nitride (GaN) substrates ...

    SBIRPhase II2010National Science Foundation
  7. Scalable technology for growth of high quality single crystal gallium nitride

    Amount: $750,000.00

    We propose to demonstrate and advance several key aspects of our novel, scalable ammonothermal technology for growth of high quality single crystal gallium nitride. Specifically, we propose to demons ...

    STTRPhase II2010Air Force Department of Defense
  8. SBIR Phase I: High Quality, Low Cost Bulk Gallium Nitride Substrates

    Amount: $99,935.00

    This Small Business Innovation Research Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. ...

    SBIRPhase I2009National Science Foundation
  9. Development of Fabrication Techniques for High Extraction Efficiency Bulk-GaN-Based LEDs

    Amount: $99,767.00

    While there have been tremendous advances in light-emitting diode (LED) technology based on gallium nitride (GaN), LED performance still falls short of what is required for solid-state lighting to bec ...

    SBIRPhase I2009Department of Energy
  10. Scalable technology for growth of high quality single crystal gallium nitride

    Amount: $100,000.00

    This Small Business Technology Transfer Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. ...

    STTRPhase I2009Air Force Department of Defense

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