SPUTTERED NEUTRAL MASS SPECTROMETRY FOR THE QUANTITATIVE DEPTH PRO FILING OF COMPOUND SEMICONDUCTOR MATERIALS DEVELOPMENT

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 2435
Amount: $499,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1986
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
301 Chesapeake Dr, Redwood City, CA, 94063
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr David A Reed
 (415) 369-4567
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE DEVELOPMENT OF ADVANCED COMPOUND SEMICONDUCTOR MATERIALS FOR THE NEXT GENERATION SEMICONDUCTOR DEVICES WILL INCREASE THE DEMANDS FOR SOPHISTICATED MATERIALS CHARACTERIZATION. ALTHOUGH A VARIETY OF SURFACE AND MICROANALYTICAL TECHNIQUES EXIST FOR CHEMICAL CHARACTERIZATION OF THESE MATERIALS, NO TECHNIQUE YET EXISTS FOR QUANTITATIVE MICROSCALE STOICHIOMETRIC ANALYSES. THE RESEARCH PROPOSED FOR PHASE I WILL EVALUATE AND DEVELOP AN APPROACH FOR THE DIRECT MICROCHARACTERIZATION OF COMPOUND SEMICONDUCTOR STOICHIOMETRY BY SPUTTERED NEUTRAL MASS SPECTROMETRY EMPLOYING ION SPUTTERING TO INTRODUCE ATOMS INTO A PLASMA FOR ELECTRON IMPACT IONIZATION. THUS, THE ATOMS ARE EXCITED IN AN ARGON-BASED PLASMA RATHER THAN IN THE MATERIAL ITSELF, THEREBY CIRCUMVENTING THE "MATRIX EFFECT," WHICH SERIOUSLY COMPLICATES QUANTITATIVE MAJOR CONSTITUENT ANALYSIS. THE GOAL OF PHASE I WILL BE TO DETERMINE THE EFFICACY OF THIS TECHNIQUE AND TO EXAMINE AND EVALUATE INSTRUMENTAL CONFIGURATIONS AS THEY RELATE TO OTHER DEFENSE RELATED MATERIALS CHARACTERIZATION NEEDS. A SUBSEQUENT PHASE II PROGRAM, IF FUNDED, WOULD BE TO DESIGN, ASSEMBLE, AND EVALUATE AN INSTRUMENTAL CONFIGURATION, WHILE PHASE III WILL CARRY THIS INSTRUMENTATION INTO THE COMMERCIAL MARKETPLACE.

* Information listed above is at the time of submission. *

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