SPUTTERED NEUTRAL MASS SPECTROMETRY FOR THE QUANTITATIVE DEPTH PRO FILING OF COMPOUND SEMICONDUCTOR MATERIALS DEVELOPMENT

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$499,000.00
Award Year:
1986
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
2435
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Charles Evans & Associates
301 Chesapeake Dr, Redwood City, CA, 94063
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr David A Reed
(415) 369-4567
Business Contact:
() -
Research Institution:
n/a
Abstract
THE DEVELOPMENT OF ADVANCED COMPOUND SEMICONDUCTOR MATERIALS FOR THE NEXT GENERATION SEMICONDUCTOR DEVICES WILL INCREASE THE DEMANDS FOR SOPHISTICATED MATERIALS CHARACTERIZATION. ALTHOUGH A VARIETY OF SURFACE AND MICROANALYTICAL TECHNIQUES EXIST FOR CHEMICAL CHARACTERIZATION OF THESE MATERIALS, NO TECHNIQUE YET EXISTS FOR QUANTITATIVE MICROSCALE STOICHIOMETRIC ANALYSES. THE RESEARCH PROPOSED FOR PHASE I WILL EVALUATE AND DEVELOP AN APPROACH FOR THE DIRECT MICROCHARACTERIZATION OF COMPOUND SEMICONDUCTOR STOICHIOMETRY BY SPUTTERED NEUTRAL MASS SPECTROMETRY EMPLOYING ION SPUTTERING TO INTRODUCE ATOMS INTO A PLASMA FOR ELECTRON IMPACT IONIZATION. THUS, THE ATOMS ARE EXCITED IN AN ARGON-BASED PLASMA RATHER THAN IN THE MATERIAL ITSELF, THEREBY CIRCUMVENTING THE "MATRIX EFFECT," WHICH SERIOUSLY COMPLICATES QUANTITATIVE MAJOR CONSTITUENT ANALYSIS. THE GOAL OF PHASE I WILL BE TO DETERMINE THE EFFICACY OF THIS TECHNIQUE AND TO EXAMINE AND EVALUATE INSTRUMENTAL CONFIGURATIONS AS THEY RELATE TO OTHER DEFENSE RELATED MATERIALS CHARACTERIZATION NEEDS. A SUBSEQUENT PHASE II PROGRAM, IF FUNDED, WOULD BE TO DESIGN, ASSEMBLE, AND EVALUATE AN INSTRUMENTAL CONFIGURATION, WHILE PHASE III WILL CARRY THIS INSTRUMENTATION INTO THE COMMERCIAL MARKETPLACE.

* information listed above is at the time of submission.

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