SECONDARY ION MASS SPECTROMETER ANALYSIS OF DEFECTS IN SEMICONDUCTORS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,766.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
10632
Agency Tracking Number:
10632
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
301 Chesapeake Dr, Redwood City, CA, 94063
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Richard S Hockett
Principal Investigator
(415) 369-4567
Business Contact:
() -
Research Institution:
n/a
Abstract
TRADITIONAL METHODS, SUCH AS CHEMICAL ETCHING AND TEM, FOR CHARACTERIZING DEFECTS IN SEMICONDUCTORS ARE NOT ENTIRELY ADEQUATE AT THE VLSI/ULSI LEVEL OF INTEGRATION. SIMS COUPLED WITH DEFECT DECORATION BY A SIMS-SENSITIVE ELEMENT IS PROPOSED AS A COMPLEMENTARY METHOD. THE OBJECTIVES OF THIS PHASE I PROJECT ARE: (1) TO DETERMINE HOW WELL SIMS CANDETECT OXYGEN PRECIPITATES, DISLOCATION LOOPS, AND STACKING FAULTS IN SILICON WHEN A SIMS-SENSITIVE ELEMENT IS USED TO DECORATE THE DEFECTS; AND (2) TO DETERMINE THE QUANTITATIVE RELATIONSHIP BETWEEN THE SIMS MEASUREMENT OF THE DECORATIVE ELEMENT AND THE DEFECT DENSITY AND SIZE. THEPRIMARY DECORATIVE ELEMENT TO BE STUDIED IS FLUORINE.

* information listed above is at the time of submission.

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