Sol-Gel Derived Porous Polyimide-Silica

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1996
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
32091
Agency Tracking Number:
32091
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
19365 Business Center Drive,, Suite 8 & 9, Northridge, CA, 91324
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Haixing Zheng
(818) 727-9786
Business Contact:
() -
Research Institution:
n/a
Abstract
Low dielectric constant materials play a key role in the future semiconductor manufacture. Employment of low K materials as intermetal dielectrics (IMDs) will increase chip speed by reducing "RC" time delays. Currently, organic polymers (e.g. polyimides) and porous silica have been investigated and the feasibility to be used as IMDs has been demonstrated although there are some other concerns. In this proposal, we plan to make low dielectric constant porous polyimide-silica nanocomposites via the sol-gel process. The material will have porous silica network while the surface of the pore will be modified by polyimide. The emphasis is placed on obtaining the stable porous SiO2-polyimide film which can be achieved by controlling amount of water and catalysis. It is expected that the resultant new material will have the lowest dielectric constant (<2.5), excellent thermal stability, thin film processing and dimensional stability and low water uptake.

* information listed above is at the time of submission.

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