Spire Semiconductor, LLC

Basic Information

25 Sagamore Park Road
Hudson, NH, 03051-4901

Company Profile

n/a

Additional Details

Field Value
DUNS: 124267779
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 200


  1. Inverted 3J Tandem Thermophotovoltaic Modules

    Amount: $99,486.00

    Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP w ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  2. Low Cost Multi Junction Solar Cells for Space Applications Incorporating Quantum Wells Sub Cells

    Amount: $99,885.00

    Spire Semiconductor proposes a novel MOCVD growth scheme that will substantially reduce the production costs of inverted multi-junction solar cells. Incorporating quantum well structures will be inve ...

    STTR Phase I 2010 Missile Defense Agency Department of Defense
  3. Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva

    Amount: $99,493.00

    Dark current plays an essential role in the performance of LWIR InAs/GaSb SL-based FPAs. Previous improvements in material quality and device design have significantly suppressed bulk contributions to ...

    SBIR Phase I 2010 Missile Defense Agency Department of Defense
  4. Strained Layer Superlattice Dual Band Mid-Wavelength Infrared/Long Wavelength Infrared (MWIR/LWIR) Focal Plane Arrays

    Amount: $79,593.00

    Spire Semiconductor proposes to make InAs/GaSb based MWIR/LWIR dual-band FPA photodetectors with low surface-leakage current using the unique processing and passivation techniques developed at Spire S ...

    SBIR Phase I 2010 Navy Department of Defense

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