Spire Semiconductor, LLC


25 Sagamore Park Road
Hudson, NH, 03051-4901


DUNS: 124267779
# of Employees: 200

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts

Award Listing

  1. Inverted 3J Tandem Thermophotovoltaic Modules

    Amount: $99,486.00

    Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP w ...

    SBIRPhase I2011National Aeronautics and Space Administration
  2. Low Cost Multi Junction Solar Cells for Space Applications Incorporating Quantum Wells Sub Cells

    Amount: $99,885.00

    Spire Semiconductor proposes a novel MOCVD growth scheme that will substantially reduce the production costs of inverted multi-junction solar cells. Incorporating quantum well structures will be inve ...

    STTRPhase I2010Missile Defense Agency Department of Defense
  3. Strained Layer Superlattice Dual Band Mid-Wavelength Infrared/Long Wavelength Infrared (MWIR/LWIR) Focal Plane Arrays

    Amount: $79,593.00

    Spire Semiconductor proposes to make InAs/GaSb based MWIR/LWIR dual-band FPA photodetectors with low surface-leakage current using the unique processing and passivation techniques developed at Spire S ...

    SBIRPhase I2010Navy Department of Defense
  4. Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva

    Amount: $99,493.00

    Dark current plays an essential role in the performance of LWIR InAs/GaSb SL-based FPAs. Previous improvements in material quality and device design have significantly suppressed bulk contributions to ...

    SBIRPhase I2010Department of Defense Missile Defense Agency

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