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Conformal Multilayered Passivation for Type-II indium arsenide/gallium antimonide Superlattice Mesas

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-17-C-7317
Agency Tracking Number: B2-2189
Amount: $1,116,314.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: MDA14-021
Solicitation Number: 2014.2
Solicitation Year: 2015
Award Year: 2017
Award Start Date (Proposal Award Date): 2016-10-31
Award End Date (Contract End Date): 2019-04-30
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bhandari
 Principal Investigator/Senior Scientist
 (617) 668-6922
Business Contact
 Joanne Gladstone
Phone: (617) 668-6845
Research Institution

The unique electronic properties of periodically-arranged indium arsenide/gallium antimonide (InAs/GaSb) mesas in the type-II strained layer superlattices (SLS) make them a superior alternative to the conventional HgCdTe sensors for longwave infrared focal plane array (LWIR FPA) detectors. However, despite the highly promising quantum structures of SLS, its performance is currently limited by high reverse leakage current, attributed to the discontinuity in the periodic crystal structure caused by mesa delineation. The Phase I efforts have successfully addressed this challenge by demonstrating a suitable thin solid film passivation on nBn Type-II SLS mesas.The Phase II effort will further this research by evaluating the newly developed passivation technology for pBp Type-II SLS devices, which are highly sensitive to surface inversion. To ensure optimal device performance, the passivation technology will be optimized to yield uniform, conformal, pinhole-free and stoichiometric composition, processed at low substrate temperatures.

* Information listed above is at the time of submission. *

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