ELECTROLUMINESCENCE OF AMORPHOUS SILICON-CARBIDE ALLOYS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,531.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
10633
Agency Tracking Number:
10633
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Po Box 177, Princeton, NJ, 08542
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
H Schade
Principal Investigator
(609) 799-8800
Business Contact:
() -
Research Institution:
n/a
Abstract
AMORPHOUS SILICON-CARBIDE MATERIALS ARE PROPOSED TO BE INCORPORATED INTO ELECTROLUMINESCENT THIN-FILM DEVICES. THESE MATERIALS, DUE TO THEIR NON-CONSERVED MOMENTUM TRANSITIONS OFFER HIGH LUMINESCENCE EFFICIENCIES, AND VARIABLE EMISSION WAVELENGTHS, DEPENDING ON THE CARBON CONTENT OF A-SI1-XCX:H. AT LEAST TWO DEPOSITIONMETHODS, RF GLOW DISCHARGE DEPOSITION AND PHOTO-CVD, ARE TO BE USED TO COMPARE TWO TYPES OF ELECTROLUMINESCENT STRUCTURES, AC-DRIVEN INSULATOR/A-SI1-XCX:H/INSULATOR DEVICES AND FORWARD-BIAS DRIVEN P-I-N LIGHT-EMITTING DIODES. THESE DEPOSITION METHODS ARE SUITABLE FOR BOTH INSULATOR AND AMORPHOUS SILICON-CARBIDE LAYERS, AS WELL AS FOR N AND P-DOPED LAYERS. COMPARED TO CONVENTIONAL LARGE-AREA THIN-FILM ELECTROLUMINESCENT DEVICES, THE PREPARATION CAN THUS BE INTEGRATED INTO ONE TECHNIQUE, AND HENCE SIGNIFICANTLY REDUCE COST.

* information listed above is at the time of submission.

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