You are here

Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-16-P-0143
Agency Tracking Number: A161-021-1024
Amount: $99,999.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: A16-021
Solicitation Number: 2016.1
Timeline
Solicitation Year: 2016
Award Year: 2016
Award Start Date (Proposal Award Date): 2016-07-06
Award End Date (Contract End Date): 2017-01-05
Small Business Information
1912 NW 67th Place
Gainesville, FL 32653
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Rajiv K Singh
 (352) 334-7270
 rksingh@sinmat.com
Business Contact
 Deepika Singh
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
N/A
Abstract

The low cost manufacturing of high quality, electronic grade single crystal and poly crystal diamond wafer depends on development of scalable, defect reduction growth and polishing methods. Sinmat has developed novel scalable polishing methods that create damage free surface and eliminate sub-surface damage.By working together with leaders in diamond growth, diamond wafer with low defect density, low surface roughness will be obtained. Furthermore the scalable nature of the growth and polishing process will ensure significant reduction in manufacturing costs in the future.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government