Terahertz Focal Plane Arrays

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,903.00
Award Year:
2010
Program:
STTR
Phase:
Phase I
Contract:
FA9550-10-C-0118
Agency Tracking Number:
F09B-T33-0183
Solicitation Year:
n/a
Solicitation Topic Code:
AF 09TT33
Solicitation Number:
n/a
Small Business Information
AEgis Technologies Group, Inc.
631 Discovery Drive, Huntsville, AL, 35806
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
625694500
Principal Investigator:
Martin Heimbeck
Research Scientist
(256) 922-0802
mheimbeck@aegistg.com
Business Contact:
Gary Bell
Manager, Contracts
(256) 922-0802
gbell@aegistg.com
Research Institution:
University of Buffalo
John Doe
408 Capen Hall
Buffalo, NY, 14260
(716) 645-2939
Nonprofit college or university
Abstract
Recent advances in THz-source stability, power and practicality have opened the door for active THz imaging in both commercial and military settings. AEgis is teaming with U Buffalo to develop a THz detection device that utilizes classical rectification effects in semiconductor point contacts (SPCs) to achieve response in the 1 to 10 THz range and is capable of operating at temperatures over 150 K. The technology be fabricated in a video-rate focal plane array (FPA) capable of spanning this frequency range. The principle of operation is based on rectification of a gate voltage by THz radiation. This detection technique has advantages that include extremely fast operation (ns response time), excellent bandwidth and wide frequency coverage. The project will addresses critical technology gaps including: (1) Demonstration of the SPC above 150 K by measuring nonlinear I/V response and applying readout amplification techniques, (2) Expand the current frequency sensitivity of the SPC to meet the broadband requirements (1 to 10 THz) by incorporating a novel fractal antenna design, and (3) showing the extensibility of the device design and readout electronics to produce a FPA using SPC pixels. BENEFIT: The objective of this proposal is to develop a THz detection device that utilizes classical rectification effects in semiconductor point contacts (SPCs) to achieve response in the 1 to 10 THz range, that is capable of operating at temperatures over 150 K, and which can be fabricated in a video-rate focal plane array (FPA) capable of spanning this frequency range. The principle of operation is based on rectification of a gate voltage by THz radiation. This novel detection technique has the ability to outperform other sensor technologies in this frequency regime with advantages that include extremely fast operation (ns response time), excellent bandwidth and wide frequency coverage.

* information listed above is at the time of submission.

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