On-Chip Passive Phase-Locking for High Coherent Power, Mid-IR Quantum Cascade Lasers

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-11-C-0007
Agency Tracking Number: A10A-007-0152
Amount: $99,999.00
Phase: Phase I
Program: STTR
Awards Year: 2010
Solitcitation Year: 2010
Solitcitation Topic Code: A10A-T007
Solitcitation Number: 2010.A
Small Business Information
Intraband LLC
200 N. Prospect Ave., Madison, WI, 53726
Duns: 829814925
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dan Botez
 Member
 (608) 265-4643
 dbotez@charter.net
Business Contact
 Robert Marsland
Title: President
Phone: (608) 239-3296
Email: rmarsland@tds.net
Research Institution
 University of Wisconsin-Madison
 Kim Moreland
 1415 Engineering Drive
Madison, WI, 53726
 (608) 262-3822
 Nonprofit college or university
Abstract
The technical objectives of this proposal are: 1) the design of 8 micron-emitting active-photonic-crystal (APC) quantum-cascade (QC) lasers by using passive phase-locking in a monolithic structure in order to achieve multiwatt-range, diffraction-limited powers; and 2) the development of the key fabrication steps for realizing the proposed APC QC laser. Deep-well (DW) QC lasers will be used in the design since they suppress carrier leakage out of active regions, resulting in electro-optical characteristics much less temperature sensitive than for conventional QC devices; thus allowing for significant increases in average power and wallplug efficiency. At an emission wavelength of 8 microns the estimated increase in average power for a single QC laser is from 0.2 W to 0.5 W. For coherently scaling the power at the chip level, a novel type of APC-type structure is proposed whose elements are DW-QC lasers. The design will be for APC devices of built-in index step an order of magnitude higher than for conventional APC-QC devices, as to achieve stable-beam operation in quasi-CW or CW operation to high coherent powers with high wallplug efficiency. For 8 micron-emitting devices the design will be for usable average powers more than 3 W, delivered in diffraction-limited beams.

* information listed above is at the time of submission.

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