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6500V-100A SiC JFET-Based Half-Bridge Module

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-16-P-2063
Agency Tracking Number: N161-066-0533
Amount: $79,848.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N161-066
Solicitation Number: 2016.1
Timeline
Solicitation Year: 2016
Award Year: 2016
Award Start Date (Proposal Award Date): 2016-07-11
Award End Date (Contract End Date): 2017-05-10
Small Business Information
7 Deer Park Drive
Monmouth Junction, NJ 08852
United States
DUNS: 042068101
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. Xueqing (Larry) Li
 (732) 355-0550
 lli@unitedsic.com
Business Contact
 J. Dries
Phone: (732) 355-0550
Email: jcdries@unitedsic.com
Research Institution
N/A
Abstract

Over the last decade, tremendous efforts have been invested in developing high voltage SiC power switches. At present, SiC unipolar power switches including MOSFETs and normally-on JFETs have been commercially available at voltage ratings up to 1700V. However, medium voltage (>3300V) SiC power devices are still not commercially available mainly because of the very high cost of high quality medium-voltage SiC epi-wafers. There is a strong need for a cost-effective medium-voltage SiC power switch that can be commercialized and moved into mass production quickly. In this program, United Silicon Carbide, Inc. (USCi) proposes to develop such a 6.5kV SiC power module based on the technology of series-connecting multiple commercial available low-voltage (1,200V to 1,700V) SiC normally-on JFETs. The proposed approach has substantial performance advantages over the medium-voltage SiC MOSFET solution. For example, the proposed approach has a higher threshold voltage (>3V at 150C) providing higher noise immunity, can be driven by a conventional gate driver for ease to use, and has an excellent built-in antiparallel diode with a knee voltage of only 0.7V.

* Information listed above is at the time of submission. *

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