Growth and Testing of AgGa(1-X)InxSe2 for High Average Power Nonlinear Optics

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,480.00
Award Year:
1998
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
40994
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
CLEVELAND CRYSTALS, INC.
19306 Redwood Ave, Cleveland, OH, 44100
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Gary Catella
(440) 461-1384
Business Contact:
() -
Research Institution:
n/a
Abstract
AgGa(1-x)InsSe2 is a unique nonlinear crystal suitable for a wide range of 3-wave mixing applications, including co2 laser NCPM SHG and THG. It combines strong nonlinear coupling with phase-matching across a wide (0.8-13um) transmission range. These properties also provide the basis for near-IR pumped OPO and DFG systems generating tunable laser radiation from ~2.0 to 13 um. When combined with demonstrated SFG techniques, the range of available wavelengths is extended to the eye safe region. In addition to CO2 lasers for SHG/THG, solid state 2 and 3um lasers may be used for OPO and DFG systems. CCI has grown low absorption AgGa(1-x)InxSe2 using AgGaS2 and AgGaSe2growth-technology. However, material must be grown with a variety of In concentrations and in sufficient volume to allow material characterization and to establish production parameters. The goal would be to establish preliminary production of low (0.005-0-0.15cm1) bulk absorption crystals, similar to the current range of production AgGaSe2. During Phase I, low absorption/scatter crystals would be grown and processed for testing. Emphasis would be placed on obtaining uniform doping levels at x~40%. Phase II would include continued analysis of crystal characteristics and development of a standardized production process. The goal would be to attain routine production of low absorption/scatter AgGa(1-x)InxSe2 at the desired In concentration.

* information listed above is at the time of submission.

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