GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,582.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
NNX10CD94P
Award Id:
95454
Agency Tracking Number:
094143
Solicitation Year:
n/a
Solicitation Topic Code:
O1
Solicitation Number:
n/a
Small Business Information
2700 East 28th Street, Suite 120, Minneapolis, MN, 55406
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
832797158
Principal Investigator:
JodyKlaassen
Principal Investigator
(612) 226-1249
jklaassen@alum.mit.edu
Business Contact:
JodyKlaassen
Business Official
(612) 226-1249
jklaassen@alum.mit.edu
Research Institute:
n/a
Abstract
This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions offers the possibility of drastically reducing the density of line defects. As these defects adversely affect both breakdown voltages and electron velocities, their reduction can significantly increase the performance of high power Ka-band HEMT structures used for satellite communications. To achieve low defect densities in GaN films and efficient, large scale manufacturing, IIIAN will utilize new chemical growth methods based on nitrogen-enriched metal solutions, in particular the Ca-Ga-N ternary system. In the binary calcium-gallium alloy system it is possible to achieve a nitrogen atomic fraction of 2% at 900 oC and 2 bar. This is a significantly higher fraction than is possible in pure gallium solutions. For example, a temperature of ~1700 oC and pressure of ~10 kbar are necessary to achieve even 0.1% atomic nitrogen fraction in pure gallium solvent.

* information listed above is at the time of submission.

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