Low Noise, High Efficiency InGaAs/InAIAs Avalanche Photodiodes for Photon Counting at 1.55 Micrometer Wavelength

Award Information
Agency: Department of Commerce
Branch: N/A
Contract: DG133R-05-CN-1196
Agency Tracking Number: NOAA 05-94
Amount: $74,952.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 8.3.12
Solicitation Number: NOAA-2005-1
Timeline
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
10335 Guilford Road, Jessup, MD, 20794
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jian Wei
 Chip Design Engineer
 (240) 456-7142
 jwei@covega.com
Business Contact
 Peter Heim
Title: VP Advanced Technology
Phone: (240) 456-7102
Email: heim@covega.com
Research Institution
N/A
Abstract
A large area (diameter > 200 micrometer) mesa type InGaAs/InAlAs avalanche photodiode with a novel surface passivation technique is proposed for photon counting at eye-safe wavelength of > 1.4 micrometer. The device is expected to exhibit high detection efficiency, low dark count rate with minimal afterpusling, due to the small k factor of InAlAs gain material and the unique mesa sidewall treatment. It should also have the improved reliability, suitable for a broad range of commercial applications. A fully packaged APD chip will be fabricated and tested in Geiger mode to demonstrate proof-of-concept.

* Information listed above is at the time of submission. *

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