Development and Packaging of Radiation Immune Nano-Diamond Integrated Circuits for Advanced Interceptor Avionics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7303
Agency Tracking Number: B093-006-0482
Amount: $99,781.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: MDA09-006
Solicitation Number: 2009.3
Small Business Information
AET, Inc.
1900 S. Harbor City Blvd., Suite 225, Melbourne, FL, 32901
DUNS: 878400068
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Glenn Hess
 (321) 727-0328
Business Contact
 Thomas Sanders, Jr.
Title: Chief Financial Officer
Phone: (321) 727-0328
Research Institution
The goal of this program is to develop nanosacle electronics and packaging technology that is hardened to space and nuclear radiation. Vanderbilt will assist AET in the development of packaging technologies for lateral emission-based diamond devices characterized for temperature insensitivity and radiation hardness. A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and negligible parasitic capacitance features, lithography controlled sub 100nm interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using simple microfabrication process steps. The Vanderbilt University Diamond Laboratory built the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.

* information listed above is at the time of submission.

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