Development and Packaging of Radiation Immune Nano-Diamond Integrated Circuits for Advanced Interceptor Avionics

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,781.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-10-C-7303
Award Id:
96946
Agency Tracking Number:
B093-006-0482
Solicitation Year:
n/a
Solicitation Topic Code:
MDA 09-006
Solicitation Number:
n/a
Small Business Information
1900 S. Harbor City Blvd., Suite 225, Melbourne, FL, 32901
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
878400068
Principal Investigator:
Glenn Hess
President
(321) 727-0328
ghess@aet-usa.com
Business Contact:
Thomas Sanders, Jr.
Chief Financial Officer
(321) 727-0328
tjs@aet-usa.com
Research Institution:
n/a
Abstract
The goal of this program is to develop nanosacle electronics and packaging technology that is hardened to space and nuclear radiation. Vanderbilt will assist AET in the development of packaging technologies for lateral emission-based diamond devices characterized for temperature insensitivity and radiation hardness. A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and negligible parasitic capacitance features, lithography controlled sub 100nm interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using simple microfabrication process steps. The Vanderbilt University Diamond Laboratory built the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.

* information listed above is at the time of submission.

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