CREE RESEARCH, INC.

Basic Information

4600 Silicon Drive
Durham, NC, 27703

Company Profile

n/a

Additional Details

Field Value
DUNS: 183252501
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 44


  1. Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

    Amount: $749,100.00

    N/A

    SBIR Phase II 2000 Air ForceDepartment of DefenseDepartment of Defense
  2. Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

    Amount: $99,061.00

    N/A

    SBIR Phase I 1999 Air ForceDepartment of DefenseDepartment of Defense
  3. N/A

    Amount: $746,741.00

    N/A

    SBIR Phase II 1999 Air ForceDepartment of DefenseDepartment of Defense
  4. N/A

    Amount: $749,624.00

    N/A

    SBIR Phase II 1999 ArmyDepartment of DefenseDepartment of Defense
  5. DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET

    Amount: $99,981.00

    4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude high ...

    SBIR Phase I 1998 Air ForceDepartment of DefenseDepartment of Defense
  6. Evaluaation of alternative High-Temperature high-Field Dielectrics for SiC Devices

    Amount: $99,969.00

    Silicon Carbide is exceptionally well suited for high temperature, high-power electronics. These electronics would be ideal for high-temperature applications for electric combat vehicles, including v ...

    SBIR Phase I 1998 ArmyDepartment of DefenseDepartment of Defense
  7. Development of a High Temperature Silicon Carbide CMOS Technology

    Amount: $750,000.00

    The development of a process for growing single crystal boules of 6H-SiC at the firm has lead to rapid advances in SiC device development and performance including production of the world's only comme ...

    SBIR Phase II 1997 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  8. High Voltage, High Current 4H-SiC Bipolar Power Devices

    Amount: $600,000.00

    The rapid development of the technology of producing high quality single crystal SiC wafers and thin film presents the opportunity to fabricate solid-state devices with power-temperature capability fa ...

    SBIR Phase II 1997 NavyDepartment of DefenseDepartment of Defense
  9. Development of GaN/AlGaN HEMT's on Silicon Carbide

    Amount: $749,331.00

    There is a need for high power solid state devices operating in the millimeter wave frequency range for both radar applications and high frequency communications networks. While GaAs an InP technolog ...

    SBIR Phase II 1997 ArmyDepartment of DefenseDepartment of Defense
  10. SILICON CARBIDE INSULATED GATE BIPOLAR TRANSISTOR

    Amount: $69,683.00

    N/A

    SBIR Phase I 1996 National Aeronautics and Space Administration

Agency Micro-sites

US Flag An Official Website of the United States Government