CREE RESEARCH, INC.

Company Information

Company Name
CREE RESEARCH, INC.
Address
4600 Silicon Drive
Durham, NC, 27703
Phone
n/a
URL
n/a
DUNS
183252501
Number of Employees
44
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,272,823.00
20
SBIR Phase II
$7,958,636.00
14
Chart code to be here

Award List

  1. RADIATION AND ELECTROMAGNETIC PULSE EFFECTS ON SILICON CARBIDE BASED ELECTRONICS

    Amount: $495,000.00

    SILICON CARBIDE (SIC) IS A SEMICONDUCTOR THAT POSSESSES A UNIQUE COMBINATION OF PHYSICAL AND ELECTRONIC PROPERTIES THAT MAKE DEVICES PRODUCED FROM THIS MATERIAL INTRINSICALLY RADIATION AND ELECTROMAGN ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  2. DEVELOPMENT OF SILICON CARBIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR HIGH POWER OPERATION AT HIGH TEMPERATURES

    Amount: $408,008.00

    SILICON CARBIDE POSSESSES A UNIQUE COMBINATION OF PROPERTIES THAT ALLOW SIMULTANEOUS HIGH TEMPERATURE AND HIGH POWER OPERATION OF ELECTRONIC DEVICES MADE FROM THIS MATERIAL. THE CUBIC FORM OF SIC (BET ...

    SBIR Phase II 1990 Air ForceDepartment of Defense
  3. SUBLIMATION GROWTH OF LARGE SINGLE CRYSTALS OF BETA SILICON CARBIDE

    Amount: $490,000.00

    BETA SILICON CARBIDE (B-SIC) POSSESSES A UNIQUE COMBINATION OF PROPERTIES IMPORTANT FOR APPLICATION IN HIGH FREQUENCY ELECTRONIC DEVICES CAPABLE OF OPERATING AT HIGH POWER. THE COMBINATION OF ITS WIDE ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  4. DEVELOPMENT OF SILICON CARBIDE MOSFETS FOR HIGH TEMPERATURE SMALL SIGNAL AMPLIFIERS

    Amount: $483,000.00

    A STRONG NEED EXISTS FOR AMPLIFICATION OF SMALL ELECTRICAL SIGNALS AT HIGH TEMPERATURES FOR USE WITH SENSORS. SILICON CARBIDE POSSESSES A UNIQUE COMBINATION OF PROPERTIES THAT ALLOWS HIGH TEMPERATURE ...

    SBIR Phase II 1990 National Aeronautics and Space Administration
  5. Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

    Amount: $491,443.00

    There is an increasing need in many military systems to have solid state microwave devices with higher power capability, higher reliability, and higher operating temperatures. These devices would be i ...

    SBIR Phase II 1993 Air ForceDepartment of Defense
  6. Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

    Amount: $350,000.00

    Silicon carbide possesses a unique combination of properties, not available from other more common semiconductors, which allow it to operate in certain severe environments. These properties include a ...

    SBIR Phase II 1993 NavyDepartment of Defense
  7. 4H-Silicon Carbide for High Temperature Power MOSFETs

    Amount: $400,000.00

    THE RAPID DEVELOPMENT OF THE TECHNOLOGY FOR PRODUCING HIGH QUALITY SINGLE CRYSTAL SiC WAFERS AND THIN FILMS PRESENTS THE OPPORTUNITY TO FABRICATE SOLID-STATE DEVICES WITH POWER-TEMPERATURE CAPABILITY ...

    SBIR Phase II 1994 Missile Defense AgencyDepartment of Defense
  8. EVALUATION OF PROCESSES FOR GROWTH OF BETA SILICON CARBIDE BOULES

    Amount: $50,000.00

    BETA-SIC HAS BEEN KNOWN FOR MANY YEARS TO HAVE EXCELLENT THEORETICAL PROPERTIES FOR THE PRODUCTION OF HIGH POWER MICROWAVE DEVICES. THE COMBINATION OF ITS WIDE BANDGAP (2.2 EV @ 27 DEGREES CENTIGRADE) ...

    SBIR Phase I 1993 National Science Foundation
  9. NITRIDE/4H-SIC HETEROSTRUCTURES HEMTS

    Amount: $59,349.00

    The military has a need for high power/high frequency electronics which can operate at high temperatures for applications such as radar and electronic warfare systems. While Si and GaAs are already be ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  10. A Method for Micropipe Free Silicon Carbide Homoepitaxy

    Amount: $59,711.00

    Silicon carbide (SiC) is the ideal semiconductor for fabrication of solid state devices for power conditioning for the all-electric airplane, turbine engine actuators, and space-based power systems. T ...

    SBIR Phase I 1994 Air ForceDepartment of Defense

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