DEVELOPMENT OF SILICON CARBIDE MOSFETS FOR HIGH TEMPERATURE SMALL SIGNAL AMPLIFIERS

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$483,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
10422
Agency Tracking Number:
10422
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Cree Research Inc. (Currently CREE RESEARCH, INC.)
2810 Meridian Pkwy #176, Durham, NC, 27713
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
John W Palmour
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
A STRONG NEED EXISTS FOR AMPLIFICATION OF SMALL ELECTRICAL SIGNALS AT HIGH TEMPERATURES FOR USE WITH SENSORS. SILICON CARBIDE POSSESSES A UNIQUE COMBINATION OF PROPERTIES THAT ALLOWS HIGH TEMPERATURE OPERATION OF ELECTRONIC DEVICES MADEFROM THIS MATERIAL. THE CUBIC FORM OF SIC (BETA) HAS A WIDEBANDGAP (2.2 EV @27 DEGREES CENTIGRADE) WHICH THEORETICALLY GIVES A MAXIMUM OPERABLE TEMPERATURE OF 925 DEGREES CENTIGRADE. ALPHA-SIC (6H) HAS AN EVEN WIDER BANDGAP (2.86 EV @ 27 DEGREES CENTIGRADE), GIVING A MAXIMUM OPERABLE TEMPERATURE OF 1240 DEGREES CENTIGRADE. BOTH FORMS ALSO HAVE A HIGH BREAKDOWN ELECTRIC FIELD OF 4 X 10 6 V/CM (10 TIMES THAT OF SI AND GAAS), WHICH ALLOWS HIGH POWER OPERATION. RECENT RESEARCH ON SIC HAS RESULTED IN THE FABRICATION OF DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS) IN BETA-SIC WITH VERY GOOD CURRENT-VOLTAGE CHARACTERISTICS AT TEMPERATURES AS HIGH AS 650 DEGREES CENTIGRADE; THE HIGHEST TEMPERATURE EVERREPORTED FOR A SOLID-STATE TRANSISTOR. THESE DEVICES FAILEDAT 700 DEGREES CENTIGRADE; HOWEVER, THE MODE OF FAILURE WAS DIELECTRIC BREAKDOWN OF THE VERY THIN GATE INSULATOR, NOT BREAKDOWN OF THE SEMICONDUCTOR. RECENT RESEARCH HAS ALSO YIELDED A PROCESS FOR GROWING 6H-SIC THIN FILMS THAT HAVE A MUCH LOWER DEFECT DENSITY THAN THE BETA-SIC MENTIONED PREVIOUSLY. IT IS HEREIN PROPOSED TO FABRICATE MOSFETS, IN BOTH DEPLETION AND INVERSION-MODE, IN THE HIGHER QUALITY 6H-SIC THIN FILM, AS WELL AS INVESTIGATE INVERSION-MODE MOSFETS IN THE BETA-SIC, FOR USE IN SMALL SIGNAL AMPLIFICATION.

* information listed above is at the time of submission.

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