Development of a High Temperature Silicon Carbide CMOS Technology

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$750,000.00
Award Year:
1997
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
28420
Agency Tracking Number:
28420
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2810 Meridian Parkway, Suite, 176, Durham, NC, 27713
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
David B. Slater, Jr.
(919) 361-5709
Business Contact:
() -
Research Institute:
n/a
Abstract
The development of a process for growing single crystal boules of 6H-SiC at the firm has lead to rapid advances in SiC device development and performance including production of the world's only commercially viable blue light emitting diode. Cree is currently using 1.375 inch diameter wafers and is in the process of scaling up to 2 inch production. Cree has also demonstrated a complete range of field-effect transistors (MOSFETs, MESFETs, JFETs) in SiC which can operate at temperatures in excess of 400oC. The immediate application is directed at a high gain-high temperature CMSO op-amp. These initial results will be utilized in Phase II to provide a reliable precision part which can operate continuously at 350oC. Development of a CMOS SiC operational amplifier will provide system designers with one of the most fundamental components needed for sensor and control circuitry in next generation aircraft, marine, space craft, nuclear and industrial systems operating in high temperature environments.

* information listed above is at the time of submission.

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