Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 41083
Amount: $99,981.00
Phase: Phase I
Program: SBIR
Awards Year: 1998
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
4600 SILICON DRIVE, Durham, NC, 27703
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Ranbir Singh
 (919) 361-5709
Business Contact
Phone: () -
Research Institution
4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude higher breakdown electric field and a 2-3x higher thermal conductivity of 4H-SiC as compared to Si. Recent advances in 4H-SiC crystal quality, low doped epitaxial uniformity, dopant ion implantation, reactive ion etching and high voltage edge termination at Cree presents tremendous opportunity to fabricate high power 4H-siC ACCUFET devices. In this Phase I research, 1000 V, 1 Amp ACCUFETs capable of operating up to 350 degree C. The experimental results from the fabricated devices will then be compared with those obtained in the simulation design and further optimization will be carried out in Phase II of the program. A simulation study of various structures possible with an accumulation mode FET will also be conducted.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government