The use of ZnGeP2 in nonlinear optical applications

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$80,000.00
Award Year:
1995
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
28217
Agency Tracking Number:
28217
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
15 Industrial Park, Waldwick, NJ, 07463
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Mike Scripsick
(201) 612-0060
Business Contact:
() -
Research Institute:
n/a
Abstract
The use of ZnGeP2 in nonlinear optical applications has been limited in the past due to an extrinsic absorption in the near infrared. Defect studies of ZnGeP2 indicate that the extrinsic absorption is due to nonstoichiometry (as a result of high volatility of some components at the temperatures required for melt growth) and/or order-disorder (resulting from growing crystals in the high temperature phase and cooling to the room temperature phase). It may be possible to reduce both of these problems by growing crystals at lower temperatures (below the phase transition temperature). As such, it is the objective of this proposed effort to demonstrate the feasibility of crystal growth of ZnGeP2 using the high-temperature solution (HTS) technique.

* information listed above is at the time of submission.

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