GROWTH OF ZNTE CRYSTALS BY THE HEAT EXCHANGER METHOD (HEM)

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 21578
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Crystal Systems Inc.
27 Congress St, Salem, MA, 01970
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Chandra P Khattak
 (508) 745-0088
Business Contact
Phone: () -
Research Institution
N/A
Abstract
ZNTE IS A DIRECT BANDGAP MATERIAL WITH AN ENERGY GAP OF 2.25 EV AND MELTING POINT OF 1298 DEGREES CENTIGRADE. THIS MELT TEMPERATURE IS CLOSE TO THE SOFTENING TEMPERATURE OF BETA SILICA AMPOULES; THEREFORE, ATTEMPTS HAVE BEEN MADE TO PREPARE ZNTE FROM SOLUTION. THE PROJECT IS ADAPTING THE HEAT EXCHANGER METHOD (HEM) FOR THE GROWTH OF ZNTE CRYSTALS. THE INTEGRITY OF THE SILICA AMPOULE CAN BE MAINTAINED DURING HEM GROWTH BECAUSE THERE ARE NO TEMPERATURE GRADIENTS BUILT INTO THE HEAT ZONE AND A SUPPORT STRUCTURE FOR THE AMPOULE CAN BE USED WITH MINIMAL INTERFERENCE FOR HEAT FLOW. IT IS INTENDED TO GROW CRYSTALS UNDER LOW SUPERHEAT CONDITIONS AND TO CONTROL THE TEMPERATURE GRADIENT IN THE SOLID BY THE HEAT EXCHANGER. IF MAINTAINING THE INTEGRITY OF THE SILICA AMPOULE BECOMES A PROBLEM, IT IS INTENDED TO CARRY OUT GROWTH EXPERIMENTS IN OPEN SILICA OR GRAPHITE CRUCIBLES WITH AN INERT GAS OVER-PRESSURE.

* information listed above is at the time of submission.

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