Reduced Parasitic Lasing in Ti:Sapphire Lasers: Removing a Bottleneck to New Ways of Acceleration

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$98,458.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-07ER84820
Agency Tracking Number:
82799
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Crystal Systems, Inc.
27 Congress Street, Salem, MA, 01970
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
062191275
Principal Investigator:
David Joyce
Dr
(978) 745-0088
djoyce@crystalsystems.com
Business Contact:
Leila Panzner
Ms
(978) 745-0088
leila@crystalsystems.com
Research Institution:
n/a
Abstract
New, ultrafast, ultra-intense solid state lasers can be efficient sources of accelerated particle beams in applications ranging from high energy physics research to real world medical applications. However, parasitic lasing represents a severe bottleneck to scaling-up this new technology. Removing this bottleneck would efficiently bring accelerator technology to a wide range of real world problems. In this project, parasitic lasing will be reduced by a series of growth and post-growth treatments, in order to allow the production of large Ti:sapphire crystals without parasitic lasing. The crystals will be treated with varying oxidation states, as well as with other reactions on the surface, to provide a homogenous crystal with reduced parasitic lasing. Commercial Applications and other Benefits as described by the awardee: In addition to the application for High Energy Physics, the technology could be used in proton therapy for the treatment of cancer with compact efficient sources of high energy protons.

* information listed above is at the time of submission.

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