Reduced Parasitic Lasing in Ti:Sapphire Lasers: Removing a Bottleneck to New Ways of Acceleration

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-07ER84820
Agency Tracking Number: 82799
Amount: $749,923.00
Phase: Phase II
Program: SBIR
Awards Year: 2008
Solicitation Year: 2007
Solicitation Topic Code: 31
Solicitation Number: DE-PS02-06ER06-30
Small Business Information
27 Congress Street, Salem, MA, 01970
DUNS: 062191275
HUBZone Owned: Y
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Joyce
 Dr
 (978) 745-0088
 djoyce@crystalsystems.com
Business Contact
 Leila Panzner
Title: Ms
Phone: (978) 745-0088
Email: leila@crystalsystems.com
Research Institution
N/A
Abstract
New, ultra-fast, ultra-intense solid state lasers can be efficient sources of accelerated particle beams in applications ranging from high energy physics research to real world medical applications. Parasitic lasing represents a severe bottleneck to scaling up this new technology. Removing this bottleneck will open up a range of applications of these compact lasers, efficiently bringing accelerator technology to a real world problems. Parasitic lasing is being reduced by a series of growth and post-growth treatments, to ultimately allow production of large Ti:sapphire crystals without parasitic lasing for laser applications. Commercial Applications and other Benefits as described by the awardee: During the Phase I, treatments of laser crystals were developed to form layers that would stop parasitic lasing. One of these treatments was applied to a large, high-power laser crystals and this crystal was successfully used in a real high power system at Lawrence Berkeley National Laboratory. Better ways to limit parasitic lasing were developed with smaller scale rods. The techniques evaluated in Phase I will be developed further and scaled up in Phase II. After the treatments are optimized, they will again be applied to a large-scale real laser rod, and tested in a high power system for reduced parasitic lasing, and thus higher output power.

* Information listed above is at the time of submission. *

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