IRDT Solutions, Inc

Company Information

Company Name
IRDT Solutions, Inc
Address
2850 Mesa Verde Drive East, Unit 103
Costa Mesa, CA, -
Phone
1 --
URL
n/a
DUNS
830609090
Number of Employees
1
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$319,851.00
3
SBIR Phase II
$519,799.00
1
STTR Phase I
$199,885.00
2
Chart code to be here

Award List

  1. An Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors

    Amount: $69,960.00

    Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phas ...

    SBIR Phase I 2010 ArmyDepartment of Defense
  2. Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures

    Amount: $99,916.00

    Phase I work will focus on demonstrating the feasibility of our proposed approach to fabricate type-II strained-layer superlattice FPAs based on III-V materials with improved state of the art in perfo ...

    SBIR Phase I 2011 Department of Defense
  3. Defect Reduction Techniques for Large Format Infrared Detector Materials

    Amount: $99,916.00

    Phase I objective is to demonstrate the feasiblility of our proposed approach to minimize the defect and dislocation size and densities in Si substrate based HgCdTe epitaxial layers with a cut off wav ...

    STTR Phase I 2012 Missile Defense AgencyDepartment of Defense
  4. Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

    Amount: $149,975.00

    Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to ...

    SBIR Phase I 2012 ArmyDepartment of Defense
  5. An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

    Amount: $99,969.00

    Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice de ...

    STTR Phase I 2013 Missile Defense AgencyDepartment of Defense
  6. Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

    Amount: $519,799.00

    The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goa ...

    SBIR Phase II 2013 ArmyDepartment of Defense

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