IRDT Solutions, Inc

Address

2850 Mesa Verde Drive East, Unit 103
Costa Mesa, CA, -

Information

DUNS: 830609090
# of Employees: 1

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. High Operating Temperature Long Wave HgCdTe Focal Plane Arrays

    Amount: $99,836.00

    Phase I work will focus on demonstrating the feasibility of our approach to significantly reduce the Shockley-Read related centers in Long wavelength HgCdTe and increase the minority carrier lifetime ...

    SBIRPhase I2015Department of Defense
  2. An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

    Amount: $99,969.00

    Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice de ...

    STTRPhase I2013Missile Defense Agency Department of Defense
  3. Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

    Amount: $519,799.00

    The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goa ...

    SBIRPhase II2013Department of Defense
  4. Defect Reduction Techniques for Large Format Infrared Detector Materials

    Amount: $99,916.00

    Phase I objective is to demonstrate the feasiblility of our proposed approach to minimize the defect and dislocation size and densities in Si substrate based HgCdTe epitaxial layers with a cut off wav ...

    STTRPhase I2012Missile Defense Agency Department of Defense
  5. Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

    Amount: $149,975.00

    Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to ...

    SBIRPhase I2012Army Department of Defense
  6. Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures

    Amount: $99,916.00

    Phase I work will focus on demonstrating the feasibility of our proposed approach to fabricate type-II strained-layer superlattice FPAs based on III-V materials with improved state of the art in perfo ...

    SBIRPhase I2011Department of Defense
  7. An Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors

    Amount: $69,960.00

    Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phas ...

    SBIRPhase I2010Army Department of Defense

Agency Micro-sites

US Flag An Official Website of the United States Government