Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,672.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W909MY-10-C-0049
Agency Tracking Number:
A101-022-0377
Solicitation Year:
2010
Solicitation Topic Code:
A10-022
Solicitation Number:
2010.1
Small Business Information
SOAL Technologies LLC
10012 S. 86th Ct., Palos Hills, IL, 60465
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
828865878
Principal Investigator:
Jennene Fields
Engineer
(312) 301-4054
jfields@soal-tech.com
Business Contact:
Rasdip Singh
President
(312) 301-4054
rsingh4@soal-tech.com
Research Institution:
n/a
Abstract
Our proposed large wafer re-usable annealing system (RAS) will significantly increase temperature stability, uniformity, and control – increasing the yield of high quality MCT devices. Provided in this proposal is a detailed process for engineering an advanced annealing system, that begins with identifying key annealing parameters. SOAL has been developing RAS for over one year and has a stronger understanding of creating an innovative MCT annealing system than most other companies. Therefore, SOAL is in a unique position to develop RAS with a substantially lower level of risk. We also have several years of experience in designing and fabricating prototypes, thermal modeling and writing software programs. Each of these has been utilized in our preliminary designs, and discussed in this effort. We intend to model thermal variations on a variety of furnace and annealing components, with the goal of gaining invaluable insight to each designs probable performance. RAS was designed to incorporate the proven concepts of Hg annealing into a more stable, controllable, and re-usable Hg annealing system for large MCT wafers.

* information listed above is at the time of submission.

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