In-situ Stress and Temperature Optical Monitoring for low-cost heteroepitaxial substrates for HgCdTe infrared detectors.

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,571.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W909MY-10-C-0034
Award Id:
97694
Agency Tracking Number:
A093-151-0221
Solicitation Year:
n/a
Solicitation Topic Code:
Army 09-151
Solicitation Number:
n/a
Small Business Information
2182 Bishop Circle East, Dexter, MI, 48130
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
801558578
Principal Investigator:
CharlesTaylor
Product Development Manager
(734) 426-7977
cataylor@k-space.com
Business Contact:
DarrylBarlett
General Manager
(734) 426-7977
brian.english@engeniusmicro.com
Research Institute:
n/a
Abstract
The feasibility of an in-situ, real-time, non-contact system for optically monitoring temperature in the range 25-800C on Si, GaAs, and CdTe-buffered Si/GaAs substrates will be demonstrated. Real-time measurement of thin-film stress and surface reflectivity during deposition on these substrates, including samples provided by NVESD, will also be developed. Temperature measurement will be performed via band-edge thermometry and blackbody radiation analysis, while stress and reflectivity measurement will be made using an etalon-based multiple laser array approach. Data acquisition will be home-pulse triggered, with provisions made for the non-integer shaft-to-stage rotation ratio of V80H MBE reactors.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government