In-situ Stress and Temperature Optical Monitoring for low-cost heteroepitaxial substrates for HgCdTe infrared detectors.

Award Information
Agency: Department of Defense
Branch: Army
Contract: W909MY-10-C-0034
Agency Tracking Number: A093-151-0221
Amount: $69,571.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: A09-151
Solicitation Number: 2009.3
Small Business Information
2182 Bishop Circle East, Dexter, MI, 48130
DUNS: 801558578
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Charles Taylor
 Product Development Manager
 (734) 426-7977
Business Contact
 Darryl Barlett
Title: General Manager
Phone: (734) 426-7977
Research Institution
The feasibility of an in-situ, real-time, non-contact system for optically monitoring temperature in the range 25-800C on Si, GaAs, and CdTe-buffered Si/GaAs substrates will be demonstrated. Real-time measurement of thin-film stress and surface reflectivity during deposition on these substrates, including samples provided by NVESD, will also be developed. Temperature measurement will be performed via band-edge thermometry and blackbody radiation analysis, while stress and reflectivity measurement will be made using an etalon-based multiple laser array approach. Data acquisition will be home-pulse triggered, with provisions made for the non-integer shaft-to-stage rotation ratio of V80H MBE reactors.

* Information listed above is at the time of submission. *

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