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Silicon Carbide Gate Driver

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX17CC84P
Agency Tracking Number: 175254
Amount: $124,330.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: S3.03
Solicitation Number: N/A
Timeline
Solicitation Year: 2017
Award Year: 2017
Award Start Date (Proposal Award Date): 2017-06-09
Award End Date (Contract End Date): 2017-12-08
Small Business Information
7 Deer Park Drive, Suite E
Monmouth Junction, NJ 08852-1921
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Matthew O'Grady
 Manager, Systems & IC Develop.
 (732) 355-0550
 mogrady@unitedsic.com
Business Contact
 Scott Kelly
Title: Business Official
Phone: (732) 355-0550
Email: skelly@unitedsic.com
Research Institution
N/A
Abstract

NASA needs efficient, low mass, low volume power electronics for a wide variety of applications and missions. Silicon carbide (SiC) switches provide fast, low loss switching, low on-resistance and high breakdown voltage to potentially meet this need. Gate drivers are a key component to fully realize the system level advantages that SiC power switches can provide. By implementing gate drivers in SiC, they can tolerate extreme temperatures (500 deg. C) allowing them to be collocated with the power switches they control. This reduces parasitic inductance and circuit area improving the performance of the power switch and converter. The SiC gate driver will have direct near term application in power processing units and other NASA power conversion systems and also be suitable for future exploration missions in extreme environments.

In Phase I, we will design and simulate the gate driver to show its feasibility. In Phase II, we will fabricate the gate drivers and demonstrate them operating at high temperature in a practical circuit such as a high voltage boost converter. We will also perform radiation testing on the gate driver to evaluate its radiation hardness as need for extended space operation. Following Phase II, we will integrate the gate driver with co-packaged SiC switches for NASA and commercial applications. Additionally, the advancement in TRL demonstrated by Phase II testing will help accelerate commercial availability of USCi's SiC integrated circuit fabrication service.

* Information listed above is at the time of submission. *

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