High-quality, low-cost GaN single crystal substrates for high-power devices

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000448
Agency Tracking Number: 0941-1506
Amount: $84,107.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: DE-FOA-0000941
Solicitation Number: DE-FOA-0000941
Solicitation Year: 2013
Award Year: 2015
Award Start Date (Proposal Award Date): 2014-03-05
Award End Date (Contract End Date): N/A
Small Business Information
8 South End Plaza, New Milford, CT, 06776
DUNS: 168455116
HUBZone Owned: Unavailable
Woman Owned: Unavailable
Socially and Economically Disadvantaged: Unavailable
Principal Investigator
 Shaoping  Wang
 (860) 354-2111
Business Contact
 Andrew  Timmerman
Phone: (860) 354-2111
Email: atimmerman@fairfieldcrystal.com
Research Institution
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth technique can achieve a growth rate significantly higher than that can be achieved using any existing GaN crystal growth technique, including a state-of-the-art hydride vapor phase expitaxy (HVPE) technique. As a result, GaN single crystal boules and wafers will be produced at a low cost and at a high throughput. The novel GaN growth technique, by design, has the capability to reduce dislocation densities to less than 10E4 cm-2 in GaN crystal boules, which enables fabrication of high-performance GaN high-power devices. In addition, the novel growth technique is scalable to produce GaN single crystal boules and wafers of large diameters. Fairfield Crystal team will grow GaN single crystal boules and then fabricate GaN wafers. Stony Brook University Team will conduct crystal defect characterization using variety of tools, including Synchrotron X-ray Topography.

* Information listed above is at the time of submission. *

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