High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Amount:
$69,985.00
Program:
SBIR
Contract:
W56HZV-11-C-0040
Solitcitation Year:
2010
Solicitation Number:
2010.2
Branch:
Army
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
A102-132-0348
Solicitation Topic Code:
A10-132
Small Business Information
Global Power Electronics, INC.
27 Mauchly, Suite 206, Irvine, CA, 92618
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
826918216
Principal Investigator
 Jung Hee Han
 Project Manager
 (949) 273-0041
 JHHAN@GPE-Energy.COM
Business Contact
 Sung Kim
Title: President
Phone: (949) 273-0042
Email: SJKIM@GPE-Energy.COM
Research Institution
N/A
Abstract
This project will extend the performance and capabilities of an existing and proven Silicon-on-Insulator (SOI) high temperature gate drive integrated circuit developed by the University of Tennessee (UT) to meet the Army’s requirements for a high performance SiC Gate Drive. GPE and UT will develop circuits that add high temperature galvanic isolation, high current SiC buffer drivers, and inherently safe operation with normally-on devices. Electrical and Thermal analysis will be performed at the prescribed operating temperatures and frequencies for all three types of SiC power switches. The deliverable for Phase I will be a project report with simulation results and recommendations for Phase II. The objective for the Phase I Option is to prepare for the Prototype fabrication in Phase II. GPE will conduct a conceptual packaging study to determine the best electrical layout for high frequency and the best thermal layout for reduction of device temperatures and stress reduction. Currently there are no commercially available low voltage SiC devices for a small footprint buffer circuit so another task will be to optimize the SiC buffer for low voltage operation.

* information listed above is at the time of submission.

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