Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$710,641.00
Award Year:
2010
Program:
SBIR
Phase:
Phase II
Contract:
W91CRB-11-C-0012
Award Id:
96704
Agency Tracking Number:
09SB2-0362
Solicitation Year:
n/a
Solicitation Topic Code:
DARPA 09-017
Solicitation Number:
n/a
Small Business Information
3701 E. University Drive, Phoenix, AZ, 85213
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
117757208
Principal Investigator:
Iulian Gherasoiu
project manager
(602) 431-4782
iulian.gherasoiu@flipchip.com
Business Contact:
Bob Forcier
CEO
(602) 431-4701
bob.forcier@flipchip.com
Research Institution:
n/a
Abstract
We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.

* information listed above is at the time of submission.

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