Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-10-C-0054
Agency Tracking Number: 09SB2-0362
Amount: $137,881.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: SB092-017
Solicitation Number: 2009.2
Small Business Information
3701 E. University Drive, Phoenix, AZ, 85213
DUNS: 117757208
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Iulian Gherasoiu
 project manager
 (602) 431-4782
Business Contact
 Bob Forcier
Title: CEO
Phone: (602) 431-4701
Email: bob.forcier@flipchip.com
Research Institution
We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.

* Information listed above is at the time of submission. *

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