Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films
Department of Defense
Defense Advanced Research Projects Agency
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3701 E. University Drive, Phoenix, AZ, 85213
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AbstractWe propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.
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