SYNTHESIS OF LARGE-AREA MONOCRYSTALLINE TIC AS A SUBSTRATE FOR HETEROEPITAXIAL GROWTH OF B-SIC

Award Information
Agency:
Department of Defense
Branch:
Navy
Amount:
$89,804.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
9620
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Diamond Materials Institute In
2820 E College Ave, State College, PA, 16801
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Dr Richard Koba
 (814) 231-6200
Business Contact
Research Institution
N/A
Abstract
THE OBJECTIVE OF THE PROGRAM IS TO SYNTHESIZE A LARGE-AREA, THIN-FILM OF MONOCRYSTALLINE TIC WHICH IS SUITABLE AS SUBSTRATE FOR THE HETEROEPITAXIAL GROWTH OF BETA-SIC. MONOCRYSTALLINE TIC CAN BE GROWN BY CHEMICAL VAPOR DEPOSITION ON A LATTICE-MATCHED SUBSTRATE. DIAMOND MATERIALS INSTITUTE INC (DMI) PLANS TO ACHIEVE THIS GOAL IN TWO PHASES. IN PHASE I, DMI PLANS TO DEMONSTRATE A NOVEL, STEP PROCESS FOR HETEROEPITAXIAL GROWTH OF TIC BY CVD. THE SUBSTRATE WILL BE A FREE-STANDING B-SIC SINGLE CRYSTAL HETEROEPITAXIALLY GROWN ON SI. DMI PROPOSES A NOVEL PROCESS TO GETTER CRYSTALLINE DEFECTS FROM THE B-SIC SURFACE BEFORE TIC DEPOSITION. REMOVAL OF CRYSTALLINE DEFECTS FROM THE SURFACE OF THE B-SIC SUBSTRATE SHOULD PREVENT NUCLEATION OF DEFECTS IN THE TIC. PHASE II WILL SCALE-UP THE PROCESS TO CREATE DEFECT-FREE, TIC MONOCRYSTALS AT LEAST 100 MM IN DIAMETER. PHASE II WILL INCLUDE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-GRADE B-SIC ON THE MONOCRYSTALLINE TIC AND THE FABRICATION OF SEMICONDUCTOR DEVICES IN THE B-SIC.

* information listed above is at the time of submission.

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