Discovery Semiconductors, Inc.

Company Information

Company Name
Discovery Semiconductors, Inc.
Address
NJ
Ewing, NJ, 08628-3200
Phone
1 609-434-1311
URL
http://chipsat.com
DUNS
824781769
Number of Employees
25
Minority Owned

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,061,823.00
12
SBIR Phase II
$3,501,872.00
6
STTR Phase I
$99,000.00
1
STTR Phase II
$750,000.00
1
Chart code to be here

Award List

  1. Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array Sensors

    Amount: $100,000.00

    Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral s ...

    SBIR Phase I 2010 National Aeronautics and Space Administration
  2. Ultra-Low Noise Quad Photoreceiver for Space Based Laser Interferometric Gravity Wave Detection

    Amount: $600,000.00

    We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage 850 to 1700 nm, with responsivity ...

    SBIR Phase II 2010 National Aeronautics and Space Administration
  3. High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2- 20 GHz Applications

    Amount: $98,955.00

    We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) max ...

    SBIR Phase I 2010 Defense Advanced Research Projects AgencyDepartment of Defense
  4. Monolithic, Optically Resonant, Infrared Detector Arrays Using Indium-Gallium-Arsenide on Silicon

    Amount: $531,503.00

    We propose to develop 5 element, linear, monolithic, InGaAs-on-Silicon, spectrally selective detector arrays for the near-infrared spectrum (1.0 - 1.7 um). The technique of selective epitaxy will be u ...

    SBIR Phase II 1995 National Aeronautics and Space Administration
  5. Development of an InP Based Integrated High Speed Photoreceiver

    Amount: $735,357.00

    We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed ...

    SBIR Phase II 1996 Air ForceDepartment of Defense
  6. Monolithic, InGaAs-on-Silicon, Optical Interconnects for Massively Parallel Computing

    Amount: $735,012.00

    A solution to the problem of interchip interconnects is proposed that employs electro-optical links implemented monolithically on silicon substrates. This approach addresses the fundamental material ...

    SBIR Phase II 1996 Air ForceDepartment of Defense
  7. 100 GHz Radio Frequency (RF) Optical Interconnects and Free Space Data Links

    Amount: $64,965.00

    N/A

    SBIR Phase I 1999 Missile Defense AgencyDepartment of Defense
  8. InGaAs / InP Based Multi-level Photonic Modules for Millimeter Wave Phased Array Antennas

    Amount: $99,950.00

    The goal of the proposed development is the creation of multilevel photonic modules comprised of monolithic, InGaAs / InP p-i-n photodetector - p-HEMT power amplifier, Opto-electronic integrated circu ...

    SBIR Phase I 1998 ArmyDepartment of Defense
  9. Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors

    Amount: $99,000.00

    In Phase I, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.7 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth > 1 ...

    STTR Phase I 2005 Defense Advanced Research Projects AgencyDepartment of Defense
  10. Monolithic, InGaAs-on-Silicon, Optical Interconnects for Massively Parallel Computing

    Amount: $79,795.00

    N/A

    SBIR Phase I 1995 Air ForceDepartment of Defense

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