Development of an InP Based Integrated High Speed Photoreceiver

Award Information
Agency:
Department of Defense
Amount:
$735,357.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Air Force
Award Year:
1996
Phase:
Phase II
Agency Tracking Number:
26074
Solicitation Topic Code:
N/A
Small Business Information
Discovery Semiconductors, Inc.
186 Princeton-hightstown, Road, Bldg. 3a, Box 1, Cranbury, NJ, 08512
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Abhay M. Joshi
 (609) 275-0011
Business Contact
Phone: () -
Research Institution
N/A
Abstract
We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed InO.53GaO.47As photodetector that has a wavelength selective response. This resonant detector not only has improved quantum efficiency over conventional InGaAs high speed photodetectors, but also discriminates different wavelengths in a compact and solid state design. In addition, we will investigate different approaches for integrating high speed optical resonant detectors and MMIC amplifiers on the same InP substrate. The objective of this investigation is to determine the optimum selective epitaxy and selective etching schemes for integrating InP-based detectors and HEMT MMIC amplifiers. Our overall goal is to develop a technology for manufacturing integrated photoreceivers with frequency response up to 44 GHz. Dr. Leye Aina of the Microwave Signal, Inc. will consult.

* information listed above is at the time of submission.

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