Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$99,000.00
Award Year:
2005
Program:
STTR
Phase:
Phase I
Contract:
W31P4Q-05-C-R196
Agency Tracking Number:
05ST1-0074
Solicitation Year:
2005
Solicitation Topic Code:
ST051-007
Solicitation Number:
n/a
Small Business Information
DISCOVERY SEMICONDUCTORS, INC.
119 Silvia Street, Ewing, NJ, 08628
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
824781769
Principal Investigator:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Business Contact:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Research Institution:
UNIV. OF TEXAS AUSTIN
Joe Campbell
Department of Electrical Eng., 1 University Station C0803
Austin, TX, 78712
(512) 471-9669
Nonprofit college or university
Abstract
In Phase I, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.7 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth > 10 GHz, and (d) Wavelength response of 1300 to 1550 nm. Two different photodiode designs will be tested for maximum saturation current: Partially Depleted Absorber (PDA) and Charge Compensated Uni Traveling Carrier (CC UTC). A comparative study of these two designs will determine which structure is more suitable for the above design goals. As saturation current levels increase above 100 mA, the problem of excessive Joule heating (multiple of voltage bias and photodiode current) creates the problem of "thermal runaway" leading to eventual device failure. We will investigate "wafer bonding" of InGaAs photodiodes to silicon wafers for better heat removal caused by Joule heating. This will ultimately lead to a more reliable photodiode. In a potential Phase II, we will expand the bandwidth of the photodiodes to 100 GHz with current saturation limit up to 50 mA.

* information listed above is at the time of submission.

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