Low Noise, InGaAs Dual Photodiodes for Precise Timing

Award Information
Agency:
Department of Commerce
Branch
National Institute of Standards and Technology
Amount:
$300,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
428-08
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Discovery Semiconductors, Inc.
119 Silvia St., Ewing, NJ, 08628
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode¿s non-linearity, specifically power-to-phase conversion. During Phase I, Discovery developed dual photodiodes having a power-to-phase conversion of 3 rad/W at 1550 nm and 900 nm wavelengths simultaneously, which presents a 10 fold improvement in state-of-the-art. During Phase 2, Discovery will optimize the photodiode structure in order to improve its responsivity at 900 nm by a factor of two, while ensuring a 3 dB bandwidth of 18 GHz and power-to-phase conversion of 3 rad/W. This will correspond to a 6 dB improvement in excess phase noise as compared to the Phase 1 photodiodes.

* information listed above is at the time of submission.

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