You are here

Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-17-P-2023
Agency Tracking Number: N121-090-1138x
Amount: $149,172.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N121-090
Solicitation Number: 2012.1
Solicitation Year: 2012
Award Year: 2017
Award Start Date (Proposal Award Date): 2017-02-27
Award End Date (Contract End Date): 2017-08-26
Small Business Information
22 Centre St. Unit 4
Cambridge, MA 02139
United States
DUNS: 078360128
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Natalia Palacios
 (617) 304-4254
Business Contact
 Natalia Palacios
Phone: (617) 304-4254
Research Institution

This program aims to develop the technology for a new generation of normally-off GaN power transistors with breakdown voltages of 1000 V and linear current of 50 A. These devices will be fabricated through a combination of novel epitaxial structures and advanced fabrication technologies. Thanks to the very high critical electric field of GaN, in addition to the excellent transport properties of high electron mobility transistors, these devices will show much lower input and output capacitance than the state-of-the-art devices commercially available today, which will allow much higher switching frequencies and lower losses. The device performance will be tested through the fabrication of a power conversion circuit with efficiencies exceeding 90 %.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government