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Atomic Layer Deposition of Highly Conductive Metals

Award Information
Agency: Department of Defense
Branch: Army
Contract: W31P4Q-17-C-0120
Agency Tracking Number: A17A-001-0041
Amount: $149,998.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A17A-T001
Solicitation Number: 2017.0
Timeline
Solicitation Year: 2017
Award Year: 2017
Award Start Date (Proposal Award Date): 2017-07-31
Award End Date (Contract End Date): 2018-03-28
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bhandari
 Senior Scientist
 (617) 668-6922
 hbhandari@rmdinc.com
Business Contact
 Kanai Shah
Phone: (617) 668-6853
Email: kshah@rmdinc.com
Research Institution
 Harvard University
 Denise Lentini
 
1033 Massachusetts Avenue; 5th floor
Cambridge, MA 02138
United States

 (617) 384-5909
 Nonprofit college or university
Abstract

Novel photonic structures, such as periodic metal-dielectric photonic bandgap structures (MDPBG) have the potential to revolutionize the field of optical windows. The large mismatch in the permittivities of the metal and dielectric creates resonant tunneling, which allows for high transmission in regions where metals are typically opaque. This property makes MDPBGs very attractive for screening or filtering specific electromagnetic radiation. Despite the technologys potential for wide range of applications, there remain significant problems in manufacturing these structures reliably and economically. A specific challenge is the deposition of metals on dielectric surfaces, where the metal layer is less than 10 nm thick but smooth, conformal, continuous and highly-conductive. RMD proposes to address this issue by developing a unique atomic layer deposition technique that will integrate a well-studied metal precursor chemistry with highly energetic reactant source in order to lower the percolation threshold for metal layers. In Phase I, RMD will demonstrate the ALD of 7 10 nm thick metal film on a dielectric surface that is well characterized for its morphology and conductivity. In Phase II, RMD will demonstrate the ALD fabrication of periodic metal-dielectric structures with good interfacial adhesion, and designed to satisfy a specific spectral transmission.

* Information listed above is at the time of submission. *

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