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Nanostructured active layers for deep-green light emitting diodes (LED)

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-05-C-R112
Agency Tracking Number: 03SB2-0048
Amount: $749,745.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: SB032-029
Solicitation Number: 2003.2
Solicitation Year: 2003
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-03-16
Award End Date (Contract End Date): 2006-12-14
Small Business Information
9005 Pleasant Ridge Rd, Charlotte, NC, 28215
DUNS: 133696018
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Mike Ahrens
 Senior Engineer
 (704) 687-2727
Business Contact
 Rosanna Stokes
Title: President
Phone: (704) 604-0653
Research Institution
In phase I, Dot Metrics Technologies demonstrated the feasibility of a new method of introducing deep-green luminescent nanostructure into semiconductor materials for light-emitting device applications. The materials were used to fabricate and characterize preliminary optoelectronic device test structures. In phase II, Dot Metrics Technologies proposes to leverage these new materials and methods in a drive to market new deep-green optoelectronic light emitting devices with superior performance. Rigorous Six Sigma quality methods will be employed to optimize (1) synthesis of nanoscale materials and (2) device fabrication processes. At the end of phase 2, this will result in commercially viable nanoscale materials, and a competitive process for deep-green light emitting device fabrication.

* Information listed above is at the time of submission. *

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